The effect of oxidation on bulk trap and interface states near to the interface was investigated. Two energy-level peaks at 0.23eV (D1) and 0.40eV (D2) below the conduction band edge were observed by using the capacitance deep level transient spectroscopic method. The interface-state distribution which was obtained by using the capacitance-voltage method also exhibited a high-density peak at an energy level which was 0.23eV below the conduction-band edge. It was suggested that Si-O- dangling bonds were the source of the D1 peak. The annealing behavior of the D2 peak indicated that D2 was a divacancy-related bulk trap. The density of D2 was markedly reduced by low-temperature post-metallization annealing.

Oxidation-Induced Traps near SiO2/SiGe Interface C.G.Ahn, H.S.Kang, Y.K.Kwon, S.M.Lee, B.R.Ryum, B.K.Kang: Journal of Applied Physics, 1999, 86[3], 1542-7