AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540C were studied by using room-temperature photoluminescence spectroscopy. As the diffusion time increased from 40 to 120min, photoluminescence blue-shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6meV. Moreover, when the diffusion time was equal to or greater than 1h, it was observed firstly that a photoluminescence red-shift occurred with a photoluminescence blue-shift on the samples. After detailed analysis, it was found that the red-shift photoluminescence spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the photoluminescence red-shift and the photoluminescence blue-shift were studied qualitatively.

Photoluminescence Study of AlGaInP/GaInP Quantum Well Intermixing Induced by Zinc Impurity Diffusion. T.Lin, K.Zheng, C.L.Wang, X.Y.Ma: Journal of Crystal Growth, 2007, 309[2], 140-4