A novel high temperature metal-organic vapor phase epitaxial growth of an AlN bridge layer was reported. A positive influence of high temperatures upon the growth rate and reduction of dislocation content in the AlN bridge layer was observed. Transmission electron microscopy, X-ray diffraction and atomic force microscopic analyses confirmed that the layer had a high structural quality and smooth morphology.

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy. K.Balakrishnan, A.Bandoh, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki: Japanese Journal of Applied Physics, 2007, 46[14], L307-10