Monocrystalline films of Zn0.62Cu0.19In0.19S were grown epitaxially onto (001) GaP substrates by means of pulsed laser deposition. Twins were found to be the predominant defects, but there was a marked in-plane asymmetry of the twin distribution. That is, twin nucleation was preferred on the (111) and (¯1¯11) planes of the [1¯10] zone, while their formation was suppressed on the (¯111) and (1¯11) planes of the [110] zone. In addition to the twins, perfect 60º dislocations in the interface accommodated the misfit strain.

Defect Structure of Monocrystalline (001)-Oriented ZnCuInS Films Grown on GaP by Pulsed Laser Deposition G.Wagner, U.Lange, K.Bente, J.Lenzner, M.Lorenz: Journal of Crystal Growth, 2000, 209[1], 68-74