A photoluminescence study was made of defect levels in bulk CdTe. The photoluminescence of CdTe was measured in the 1.3–1.55eV spectral range and at 9 to 300K. The photoluminescence spectra were analyzed numerically and various parameters (peak positions, Huang–Rhys factors, etc.) determined. Numerical modelling of low-temperature spectra was performed, and it was shown that the defect band consists of three distinct transitions. Also, hyper-spectral imaging of photoluminescence was performed at 77K and analyzed the spatial distribution of defects and calculated the level of spatial correlation between the defects.

Photoluminescence Study of the 1.3–1.55eV Defect Band in CdTe. R.Furstenberg, J.O.White: Journal of Crystal Growth, 2007, 305[1], 228-36