Chemically-etched HgCdTe epilayers, grown onto CdZnTe substrates, were studied using defect etching and EDS on cleaved (110) faces. The formation of etch pits and Hg in-diffusion into CdZnTe substrates was correlated with the substrate quality: that is, the presence of dislocations around second-phase inclusions. The fact that the Hg in-diffusion took place through these dislocations was confirmed by the presence of Te-inclusions in substrates where a large density of etch pits was revealed after chemical etching. X-ray rocking curve measurements were carried out in order to reveal the crystalline quality of the substrates. FTIR spectroscopy indicated low transmission values and the absence of interference fringes in HgZnTe epilayers with large Hg diffusion. Mercury diffusion into CdZnTe substrate by up to 25μm in samples with low FWHM values and by up to 250μm in samples with multiple peaks and high FWHM values was observed.

Effect of Substrate Dislocations on the Hg In-Diffusion in CdZnTe Substrates used for HgCdTe Epilayer Growth. S.Kumar, A.K.Kapoor, A.Nagpal, S.Sharma, D.Verma, A.Kumar, R.Raman, P.K.Basu: Journal of Crystal Growth, 2006, 297[2], 311-6