Undoped epilayers and Schottky diodes were grown, via molecular beam epitaxy, onto variously misoriented n+-type GaAs(111) substrates. They were investigated by using transmission electron microscopy, current-voltage, and deep level transient spectroscopy. The density of V-shaped stacking faults, which originated at or near to the epilayer/substrate interface and extended into the entire ZnMgSe epilayer, was affected by the angle of miscut of n+-type substrates. More stacking faults existed in samples with 3 or 15º substrate miscut angles.

Substrate Misorientation Effects on ZnMgSe Layers Grown on GaAs(111) by Molecular Beam Epitaxy C.W.Wang: Journal of Crystal Growth, 1999, 203[3], 355-61