Photoluminescence at 77K from Cd1−xZnx Te samples (x = 0, 0.005 or 0.01) annealed at 900C and Cd vapor pressure PCd = 3 x 104 to 2 x 105Pa was studied. It was found that the contribution of the 1eV band to the spectrum-integrated photoluminescence from these samples was independent of PCd, in contrast to Cd0.95Zn0.05Te samples in which this contribution increased up to ∼90% as PCd grew. The band was not shifted to shorter wavelengths as x became larger. The conclusion that Zn vacancies were involved in the formation of Cd1−xZnxTe properties was confirmed. The 1eV band was attributed to capture of free holes to acceptor levels related to vacancies of both Cd and Zn. These levels were closely spaced and were therefore difficult to resolve.

On the Origin of the 1eV Band in Photoluminescence from Cd1−xZnxTe. V.E.Sedov, O.A.Matveev, A.I.Terentev, N.K.Zelenina: Semiconductors, 2007, 41[9], 1033-4