Experimental studies were conducted to investigate the influence of dislocations on the properties of CdZnTe crystals. Dislocations were introduced into CdZnTe wafers by means of bending deformation at elevated temperature. The average infra-red transmittance of CdZnTe wafers after deformation was decreased from 64 to 44%. The polarization absorption of dangling-bond electrons in dislocations should be responsible for this decrease of infra-red transmittance. In photoluminescence measurements, the shallow donor-acceptor pair transition peak at 1.557eV was detected in CdZnTe after deformation. In the defect-related region, a new band (Dcomplex) located at 1.508eV appeared, which should be attributed to defect levels introduced by dislocations. Meanwhile, leakage current at 15V was increased from 10-8 to 10-4A. The analysis suggested that the leakage current of CdZnTe after deformation was dominated by the Poole-Frenkel effect. The Te and Cd dislocations created at 2 faces introduced different electrical characteristics.

Study of Dislocations in CdZnTe Single Crystals. G.Zha, W.Jie, T.Tan, L.Wang: Physica Status Solidi A, 2007, 204[7], 2196-200