Rutherford back-scattering was used to determine the diffusion coefficients of In atoms in semi-insulating (100) GaAs implanted with 250keV In+ ions to a fluence of 3 x 1016/cm2. The material was then isobarically annealed at 600 and 800C. Computer modelling of the In depth profiles, based upon Ga vacancy-mediated diffusion, revealed good agreement with the experimental Rutherford back-scattering results. Self-annealing effect was confirmed to play an important role due to high defect mobility at room-temperature ion implantation. Large values of the In diffusion coefficients obtained in the present study, as compared with published  data for non-implanted GaAs, confirmed a strong enhancement of the diffusion process by radiation damage.

Investigation of Indium Diffusion Process in In+ Ion Implanted GaAs. M.Kulik, A.P.Kobzev, D.Jaworska, J.Żuk, J.Filiks: Vacuum, 2007, 81[10], 1124-8