It was pointed out that, whereas several methods were routinely used to measure the dislocation density and residual stresses in wafers, there was a need for methods by which to characterize the strain and stress fields around single dislocations to a high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs were considered, and the corresponding Raman shifts of the phonons were calculated. Due to the finite local resolution, mappings exhibited averaged strain values. The requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations were considered.

Micro-Raman Study of Strain Fields around Dislocations in GaAs. G.Irmer, M.Jurisch: Physica Status Solidi A, 2007, 204[7], 2309-18