The dielectric properties of Zn1-xMnxSe epilayers, where x ranged from 0 to 0.78, were studied by performing capacitance and dissipation-factor measurements at temperatures of 5 to 475K and frequencies of 20Hz to 100kHz. From the results, it was deduced that the dielectric response was caused by carrier hopping among structural defects. A monotonic variation was found in the relationship between the activation energy and the Mn concentration. This variation was explained in terms of the 4-center model; in which the number of Mn atoms that appeared in the nearest-neighbour sites of the defect could have 4 possible configurations. The measured defect behavior reflected the overall average of all of the energy levels which were involved in the center, and the result was weighted by the relative concentrations.

Dielectric Studies of ZnMnSe Epilayers J.S.Su, J.C.Wang, Y.F.Chen, J.L.Shen, W.C.Chou: Journal of Applied Physics, 1999, 86[3], 1630-3