It was noted that the lower carrier concentration and Hall mobility in Si-doped crystals was attributed to the formation of acceptor defects, in particular SiAs-, the isolated Ga vacancy, VGa3- and the (SiGa–VGa)2- complex. It was shown that contamination of the crystals with B, which was unavoidable when growing techniques using a boron oxide encapsulant, was decisive for the degree of compensation. In highly n-doped crystals, B was not only incorporated as the iso-electronic defect, BGa0. Additionally, high concentrations of BAs2- and the negatively charged BAs-donor complex were formed. These acceptors could dominate the equilibrium of point defects depending on the concentration ratio of the n-dopant and B.

Influence of Boron on the Point Defect Equilibrium in Highly n-Doped Gallium Arsenide Single Crystals. U.Kretzer, F.Börner, T.Bünger, S.Eichler: Physica B, 2007, 401-402, 246-9