A Frank-type stacking fault bounded by a partial dislocation, about a few nm in size, was observed in a commercial GaAs:Si wafer (with a Si concentration of about 1018/cm3) annealed at about 950K, by cross-sectional scanning tunnelling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms did not exist.

Atomistic Structure of Stacking Faults in a Commercial GaAs:Si Wafer Revealed by Cross-Sectional Scanning Tunnelling Microscopy. Y.Ohno, T.Taishi, I.Yonenaga, S.Takeda: Physica B, 2007, 401-402, 230-3