The effect of annealing on the photoluminescence in GaAsSbN/GaAs quantum well grown by solid-source molecular-beam epitaxy was investigated. Low-temperature (4K) photoluminescence peaks shift to higher energy sides with the increase of annealing temperature. An As–Sb atomic interdiffusion at the hetero-interface was proposed to model this effect. The compositional profile of the quantum well after interdiffusion was modelled by an error function distribution and calculated with the 10-band k•p method. When the diffusion length equals to 1.4nm, a corresponding transition energy blue-shift of 36meV was derived. This agreed with the experimental result under optimum conditions (750C, 300s).

Interdiffusion Effect on GaAsSbN/GaAs Quantum Well Structure Studied by 10-Band k•p Model. Y.X.Dang, W.J.Fan, S.T.Ng, S.Wicaksono, S.F.Yoon, D.H.Zhang: Thin Solid Films, 2007, 515[10], 4435-40