Plain-view bright-field transmission electron microscopy and cathodoluminescence were used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and non-porous SiC substrates. It was shown that the use of porous substrate reduces the mosaic structure of the films. This finding supported the compliance of porous SiC substrates, which had previously been proposed.

Cathodoluminescence and TEM Studies of HVPE GaN Layers Grown on Porous SiC Substrates. E.Kolesnikova, M.Mynbaeva, A.Sitnikova: Semiconductors, 2007, 41[4], 387-90