The diffusion of impurity atoms, their location in the host lattice and the formation and migration of vacancies were studied by using ion beam techniques and positron spectroscopy. A novel procedure was developed for the determination of depth profiles, using Rutherford back-scattering spectrometry, from samples with rough surfaces. The diffusion of Au and Pt was independent of concentration, with activation energies of 1.6 and 1.7eV, respectively. The diffusion velocity of Au depended upon the crystal quality.

Diffusion of Impurities and Vacancies in Compound Semiconductors J.Slotte: Acta Polytechnica Scandinavica, Applied Physics Series, 1999, 222, 2-44