Low defect-density m-plane GaN was grown on grooved m -plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, it was possible to increase the growth rate of GaN on one side-wall, thereby achieving one-sided wall lateral growth. Dislocation and stacking fault numbers were markedly decreased over the whole area. The densities of dislocations and stacking faults were 1.3 x 107/cm2 and <2.6 x 104/cm, respectively. The photoluminescence intensity was 213 times higher than that of an m-plane GaN template on an m-plane 4H-SiC substrate.

Reduction in Defect Density Over Whole Area of (1¯100) m-Plane GaN using One-Sidewall Seeded Epitaxial Lateral Overgrowth. T.Kawashima, T.Nagai, D.Iida, A.Miura, Y.Okadome, Y.Tsuchiya, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki: Physica Status Solidi B, 2007, 244[6], 1848-52