The behavior of plasma-induced defects deactivating Si donors in GaN was studied by using Schottky diodes with the UV illumination. It was interesting that the UV irradiating for the deactivated GaN leads to an enhancement of reactivation of the donors even at room temperature. It was found that the donor-deactivated region in n-GaN shifts toward the bulk region with increasing the illumination time. The effect of the UV illumination was thought to be the direct photodissociation of the donor-defect complexes or the injection of holes as a minority carrier.

Photo-Enhanced Reactivation of Si Donors Deactivated by Plasma-Induced Defects in n-Type GaN. S.Nakamura, Y.Ikadai, M.Suda, M.Suhara, T.Okumura: Physica Status Solidi C, 2007, 4[7], 2581-4