The effect of Au impurities, diffused onto GaSb substrates, upon the formation of nanodot hexagonal arrays created by low-energy Ar-ion sputtering was analysed. It was concluded that oblique incidence in a rotating configuration probably delayed formation of the nanodots compared to previously reported normal-incidence experiments. The presence of cracks induced by the sputtering process was observed only in the Au-diffused sample. For the same sputtering conditions, the dimensions of the dots in the Au-diffused sample were larger than in the case of the pure sample. However, they retained the same shape in both cases. Energy dispersive X-ray analysis revealed that the sputtering induced a more pronounced Ga enrichment in the case of Au-diffused sample.

Influence of Au Diffusion on the Formation of Nanodot Hexagonal Ordered Arrays on GaSb Substrates by Low Energy Ion Sputtering. J.L.Plaza, E.Diéguez: Solid State Ionics, 2007, 178[29-30], 1576-84