High-quality single crystals were grown by using the sublimation method. The X-ray rocking curves, etch pit densities and photoluminescence spectra revealed that the crystal properties changed systematically with deviations from stoichiometry. The minimum dislocation density was 3.1 x 103/cm2.

Se and Zn Vapor Pressure Control in ZnSe Single Crystal Growth by the Sublimation Method H.Tamura, K.Suto, J.Nishizawa: Journal of Crystal Growth, 2000, 209[4], 675-82