Photoluminescence and high-resolution X-ray diffraction measurements were used to study the diffusion of Te on p-GaSb thin films deposited onto n-GaSb substrates by liquid-phase epitaxy. The studied samples consisted of an n-type layer on a p-type layer. The diffusion was performed by heat-treatment (450C, 2, 4 or 6h) in a H atmosphere. After heat treatment, the n-type layer was removed with the aim of studying the diffusion behavior of Te. The photoluminescence spectra showed that, when the diffusion time was increased, the signal produced by the exitonic transitions increased its intensity. This could be attributed to the increase in the concentration of Te in the p-GaSb film.

Study of Te Diffused into GaSb by Photoluminescence and HRXRD. R.Vargas-Sanabria, E.Rosendo, J.Martínez, T.Díaz, H.Juárez, G.García, P.Rosendo-Francisco, M.Rubín, F.de Anda: Physica Status Solidi C, 2007, 4[4], 1406-10