The effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate was modelled. Blue shifts of emission wavelength as large as 270nm and 700nm were predicted from a 6nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3nm, and from a 10nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion were also investigated.Interdiffusion Effect on Quantum-Well Structures Grown on GaSb Substrate. Y.Wang, H.S.Djie, B.S.Ooi, P.Rotella, P.Dowd, V.Aimez, Y.Cao, Y.H.Zhang: Thin Solid Films, 2007, 515[10], 4352-5

Figure 4

Diffusivity of Ga in Ge

(Open circles: intrinsic, filled circles: 3.5 x 1018Ga/cm3, squares: 2.5 x 1019Ga/cm3)