The electrical characteristics of electron irradiation induced defects in n-type Ge doped with Sb were studied by using deep-level transient spectroscopy and Laplace- deep-level transient spectroscopy. The following electrons traps at 0.15, 0.20, 0.21, 0.23, 0.31 and 0.38eV below the conduction band were observed and two hole traps at 0.09 and 0.31eV above the valence band were also recorded. The electron trap level at 0.38eV was the E-centre and was the most dominant electron trap in these measurements. The capacitance versus temperature and current versus temperature characteristics of these samples showed good correlation as the irradiation dose was increased.

A Study of Electron Induced Defects in n-Type Germanium by Deep Level Transient Spectroscopy (DLTS). C.Nyamhere, M.Das, F.D.Auret, A.Chawanda: Physica Status Solidi C, 2008, 5[2], 623-5

Figure 5

Diffusivity of Sn in Ge

(Open circles: intrinsic, filled circles: 3.5 x 1018Ga/cm3, squares: 2.5 x 1019Ga/cm3)