Germanium implanted with 1MeV Si+ to a dose of 1015/cm2 created a buried amorphous layer that, upon re-growth, exhibited several forms of defects–end-of-range, regrowth-related and clamshell defects. Unlike Si, no planar {311} defects were observed. The minimal end-of-range defects were small dot-like defects and were very unstable, dissolving between 450 and 550C. This was in contrast to Si, where the end of range defects were very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the end of range damage.

Regrowth-Related Defect Formation and Evolution in 1MeV Amorphized (001) Ge. D.P.Hickey, Z.L.Bryan, K.S.Jones, R.G.Elliman, E.E.Haller: Applied Physics Letters, 2007, 90[13], 132114