The dislocation photoluminescence at 4.2K was studied in single crystals of n- and p-type material with quasi-equilibrium structure of 60° dislocations. The dislocation photoluminescence spectra for different samples were decomposed on Gaussian lines (Gm-lines) over the range 0.47-0.58eV characterized by practically the same peak energies Em and the widths under 15meV. The G-lines with Em ≤ 0.55eV were attributed to the radiation of regular segments of 60° dislocations with different stacking fault widths Δ between 30 and 90° partials. An increase of the dislocations density up to ND ≈ 107/cm2 was found to result in a considerable growth of the intensity of the G-lines with Em < 0.513eV. The factors, which promote the appearance of different Δ values for quasi-equilibrium 60° dislocation structure, were discussed.

Peculiarities of Dislocation Photoluminescence in Germanium with Quasi-Equilibrium Dislocation Structure. S.Shevchenko, A.Tereshchenko: Physica Status Solidi C, 2007, 4[8], 2898-902