High-quality single crystals were grown by using the chemical vapour transport method, with I being employed as a transport agent. The concentration of I which was incorporated during crystal growth was about 150ppm. The crystals contained no low-angle grain boundaries, but a relatively high concentration of Zn vacancies. The perfection of the crystal was high; with the peaks of high-resolution X-ray diffraction lines having a full-width at half-maximum of 17arcsec.

Growth of ZnSe Single Crystals with Low Dislocation Density Q.T.Gu, J.Q.Wei, M.K.Lu, H.S.Zhuo, J.Y.Wang, C.S.Fang, G.Landwehr, H.Ress: Journal of Crystal Growth, 1999, 207[3], 251-4