Deep-level transient spectroscopy was used to characterize the defects introduced into n-type Sb-doped Ge during electron beam deposition of different metals for Schottky contact formation. It was found that the relative concentration of the electron beam induced defects depended upon the metal used. Metals that required a higher beam intensity to evaporate, e.g. Ru, resulted in larger defect concentrations than did metals that required a lower beam intensity, e.g. Pd. The nature of some of these defects could be established by comparing their properties to those of well-known defects introduced by electron irradiation of the same material. The most prominent defect thus identified was the E-centre, i.e. the Sb-V centre. This defect forms when vacancies, that were introduced during the interaction of energetic metal and other particles with the Ge surface, diffused into the Ge where they bond to Sb dopant atomsElectrical Characterization of Defects Introduced in Ge during Electron Beam Deposition of Different Metals. F.D.Auret, S.M.M.Coelho, M.Hayes, W.E.Meyer, J.M.Nel: Physica Status Solidi A, 2008, 205[1], 159-61