The relationship between the plastic strain and the inhomogeneity of Ge distribution in single crystals of GexSi1-x (x = 4 to 9at%) solid solutions grown using the Czochralski method was studied. It was established that plastic straining developed via the nucleation of dislocations at their sources occurring in the Ge segregation bands, while the inhomogeneous profile of Ge distribution across the growth direction was caused by thermoelastic stresses.

Composition Inhomogeneity and Structural Defects in Czochralski Grown GexSi1−x Solid Solution Crystals. L.M.Sorokin, T.S.Argunova, N.V.Abrosimov, M.Y.Gutkin, A.G.Zabrodskiĭ, L.S.Kostina, J.W.Jung, J.H.Je: Technical Physics Letters, 2007, 33[6], 512-6