Interdiffusion in InxGa1−xAs/GaAs quantum dots may occur during high temperature growth and processing, which may create problems in the ultimate device performance. It was simulated through successive high temperature annealing, and the changes at each stage were studied through photoluminescence . Significant changes were observed in the peak energy, line-width, and intensity of the photoluminescence spectra. These were attributed to relaxation of strain, changes in the composition of InxGa1−xAs, and size distribution of the quantum dots, which fail to establish proper understanding qualitatively and quantitatively. Appropriate interpretations of the changes in the observed photoluminescence were presented here by using quantum mechanical concepts and computations.

Interdiffusion Induced Changes in the Photoluminescence of InxGa1-xAs/GaAs Quantum Dots Interpreted. D.Biswas, S.Kumar, T.Das: Journal of Applied Physics, 2007, 101[2], 026108