By means of deep level transient spectroscopy a dislocation-related deep-level trap was revealed in partially strain-relaxed InGaAs/GaAs heterostructures, grown by MOVPE. On the basis of the specific criteria containing deep-level transient spectroscopy-line shape and behaviour analysis as well as capture kinetics measurements, it was possible to attribute the trap to so-called localized states at the dislocation core, or close to it. A direct comparison of deep-level transient spectroscopy concentration profiles and transmission electron microscopy results permitted the electron trap to be attributed to 60° misfit dislocations lying in the heterostructure interface.

Dislocation-Related Electronic States in Partially Strain-Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE. L.Gelczuk, M.Dąbrowska-Szata, G.Jóźwiak, D.Radziewicz, J.Serafińczuk, P.Dłużewski: Physica Status Solidi C, 2007, 4[8], 3037-42