The high resolution deep-level transient spectroscopy techniques were investigated on the so-called localized states at the extended defects. The results of computer simulations of deep-level transient spectroscopy signal from GS2, GS4 and GS6 correlators were presented. It was shown how the methods based on the numerical inversion of the Laplace transform work with localized states. In order to improve these methods the numerical inversion of the Laplace transform was proposed for many temperatures simultaneously. The comparative analysis of presented techniques was performed. The normalized density of energy states for misfit dislocations in InGaAs/GaAs heterostructures was presented.

High Resolution Transient Analysis for “Localized” States at the Extended Defects in InGaAs/GaAs Heterostructures Grown by MOVPE. G.Jóźwiak, M.Dąbrowska-Szata, L.Gelczuk: Physica Status Solidi C, 2007, 4[8], 2888-92