Photoluminescence microscopy and photoluminescence spectroscopy were used to investigate the influence of the number of quantum wells and N concentration upon the quality of InGaAsN multiple quantum wells. No misfit dislocations and/or carrier localization were observed in as-grown InGaAsN multiple quantum wells. photoluminescence measurement results suggest that the photoluminescence efficiency and interfaces in the InGaAsN/GaAs quantum wells do not deteriorate with increasing number of quantum wells. In an InGaAsN 7 quantum well structure, even after annealing at temperatures as high as 850C, misfit dislocations were still not observed. This was contrary to the lattice relaxation behaviour of annealed InGaAs multiple quantum wells and was attributed to the impurity pinning of dislocations by N.

Photoluminescence Microscopy Investigation of Lattice Relaxation and Defect Formation Processes in Pseudomorphically Strained InGaAsN Multiple Quantum Wells. W.Lu, S.Chao, S.Bull, A.V.Andrianov, V.A.Grant, R.P.Campion, C.T.Foxon, M.Sadeghi, S.M.Wang, A.Larsson, E.C.Larkins: Physica Status Solidi C, 2008, 5[2], 467-72