The stress-induced diffusion process of In-Ga segregation in InxGa1-xN layer deposited on GaN was simulated step by step by using a 3D nonlinear FE method. From the thermodynamic point of view this process was governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses was considered to be the set of threading dislocations examined in plan-view high-resolution transmission electron microscopic investigations of GaN layers deposited onto sapphire.

FE Simulation of InGaN QD Formation at the Edge of Threading Dislocation in GaN. P.Dłużewski, A.Belkadi, J.Chen, P.Ruterana, G.Nouet: Physica Status Solidi C, 2007, 4[7], 2403-6