Defect states of Mn-implanted p-type InP:Zn samples annealed at 450, 550, and 600C were studied by using C–V and deep level transient spectroscopy measurements. From these results, it was confirmed that ion implantation process made defects in the InP. Thermal annealing process could reduce the crystal defects and increased the crystallinity of the InMnP. Clear deep-level transient spectroscopy signals were found, labelled HL1, HL2, and HL3, and their activation energies and cross-sections were deduced to be about 0.43, 0.29, 0.65eV and 3.09 x 10-13, 1.23 x 10-18, 3.17 x 10-13cm2, respectively. The origin of HL2 signal was considered to be a Mn-related level. Finally it was confirmed that the ferromagnetic properties of InMnP:Zn were affected by this Mn-related levels and the sample crystallinity.

Defect States of p-Type InMnP:Zn Implanted with Mn Ion. J.S.Kim, Y.I.Lee, L.Ha, E.K.Kim, Y.Shon, T.W.Kang: Physica B, 2007, 401-402, 465-8