30K-photocapacitance and excitation photocapacitance methods were used to reveal dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions. In the dislocation-free layers, the dominant deep level was located at Ec-1.30eV, whereas in the dislocated area, dominant deep levels were detected at Ec-0.86eV and 1.05eV. A neutralized state was also detected at 0.66eV+Ev. Excitation photocapacitance results have shown that the defect configuration coordinate diagram of the dislocation-induced deep levels was considered with large Frank-Condon shifts of 0.28eV.

Dislocation-Induced Deep Levels in ELO InP Revealed by Point Contact Photocapacitance Measurements. Y.Oyama, T.Kimura, J.Nishizawa: Physica Status Solidi C, 2007, 4[5], 1735-8