Here, InP nanowires were grown by gas source molecular beam epitaxy onto InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped nanowires exhibited hexagonal sidewall facets oriented along the {¯211} family of crystal planes for all nanowire diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the nanowire tips, while nanowires with lengths less than 300nm were completely free from stacking faults.

Onset of Stacking Faults in InP Nanowires Grown by Gas Source Molecular Beam Epitaxy. D.M.Cornet, V.G.M.Mazzetti, R.R.LaPierre: Applied Physics Letters, 2007, 90[1], 013116