Emission channelling techniques were used to probe the lattice sites of radioactive implanted 8Li and 111mCd in these wide-bandgap materials. The 60keV probe ions were implanted into single crystals. During implantation at about 180K, the Li atoms took up tetrahedral interstitial sites in both materials. A Li-atom site-change, from interstitial to substitutional, took place with increasing temperature. In ZnSe, the substitutional fraction reached a maximum value of 55% at 275K, and maintained this value up to 510K. In ZnTe, a maximum of 50% was reached at 250K and was maintained up to 440K. At higher temperatures, the Li atoms diffused to the surface in ZnTe and to extended defects within the crystal in ZnSe.

Emission Channelling Studies of Defect Annealing in the Wide Band Gap Semiconductors ZnTe and ZnSe K.Bharuth-Ram, H.Hofsäss, M.Restle, U.Wahl: Nuclear Instruments & Methods in Physics Research B, 1999, 156[1-4], 244-51