Semi-insulation of the narrow-gap IV-VI semiconducting compounds PbTe and Pb1-xSnxTe used for infra-red opto-electronic applications was investigated technologically and theoretically. Practically important cases in which the concentration of native defects greatly exceeds the intrinsic concentration of free carriers due to the growth conditions were discussed. In particular, doping conditions for the semi-insulation were determined for Cd, In and Ga compensating impurities.

Compensation of Native Defects in PbTe and Pb1-xSnxTe. V.N.Babentsov, F.F.Sizov: Physica Status Solidi B, 2008, 245[1], 50-2