A simple macroscopic model was developed for the prediction of As diffusion in Si under low energy-high dose implantation conditions. Under these conditions, As-enhanced diffusion was attributed mainly to interstitial injection due to the formation of As-vacancy clusters. The basis of the model was the introduction of a bulk interstitial generation source from the entire As distribution, taking into account the difference between the chemical and active profiles of the dopant during drive-in annealing. The model was introduced into a process-simulator in order to simulate the results of an experiment especially designed for this purpose. Very satisfactory simulation results were obtained, taking into account the simplicity of the model. Moreover, the model predicted, at least for short annealing times, the initial stage of As up-hill diffusion phenomenon at the native oxide/Si interface.

Modeling of Low Energy-High Dose Arsenic Diffusion in Silicon in the Presence of Clustering-Induced Interstitial Generation. D.Skarlatos, C.Tsamis: Journal of Applied Physics, 2007, 102[4], 043532