A 2-dimensional model for As diffusion in Si during rapid thermal annealing was presented. A method of solving the nonlinear differential equations system was specified. Model calculations were performed for 15keV As+ implanted into Si and annealed (950C, 600s). The results were in reasonable agreement with the experimental data, including the presence of local maximum of As atoms near to the surface.

Two-Dimensional Modelling of Diffusion of Low-Energy Implanted Arsenic in Silicon at Rapid Thermal Annealing. F.F.Komarov, A.M.Mironov, G.M.Zayats, V.A.Tsurko, O.I.Velichko, A.F.Komarov, A.I.Belous: Vacuum, 2007, 81[10], 1184-7