The physics of the retardation of B diffusion in a Ge pre-amorphized Si substrate was studied by using the kinetic Monte Carlo approach. In order to investigate the mechanism of the retardation of B diffusion in Ge pre-amorphized Si, the temporal behaviour of self-interstitials as well as the evolution of various kinds of B cluster were calculated via fine time-scale kinetic Monte Carlo calculations. The kinetic Monte Carlo study revealed that both interstitials and vacancies in the Ge pre-amorphized area disappeared very rapidly, followed by retardation of B diffusion due to the presence of excessive interstitials in the end-of-range. Furthermore, it was observed that a greater number of B clusters was produced in Ge pre-amorphized Si than the Si with no pre-amorphization. This seemed to be due to interstitials arriving from the end-of-range band generated by the Ge implant.

Atomistic Modelling for Boron Diffusion Profile in Silicon Posterior to Germanium Pre-Amorphization. J.Kim, T.Won: Microelectronic Engineering, 2007, 84[5-8], 1556-61