The diffusion of B was enhanced by irradiation with cw CO2 laser light during annealing in Ar/O2 ambient. It was found that the irradiation had the effect of enhancing the growth of an oxide layer. The possible mechanism of the enhanced diffusion was that the excess self-interstitials injected by oxidation at a laser-irradiated point assisted the diffusion of B.

Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation. H.Yamada-Kaneta, K.Tanahashi, K.Kakimoto, S.Suto: Japanese Journal of Applied Physics, 2007, 46[8A], 5085-8