The effect of H implantation upon the transport of impurities in Si was studied. Secondary ion mass spectrometry measurements were used to investigate the depth redistribution of O, C and F during low temperature (≤ 450C) isothermal annealing. Their fast migration towards the projected range region of H implants indicated the existence of a strong interaction of the impurities with H-induced defects. Diffusivities of the investigated impurities were obtained which were significantly enhanced when compared to published values, The results revealed that H implantation could be advantageously used for impurity profile engineering and gettering studies in Si in the low-temperature annealing regime.

Low Temperature Diffusion of Impurities in Hydrogen Implanted Silicon. S.Personnic, K.K.Bourdelle, F.Letertre, A.Tauzin, F.Laugier, R.Fortunier, H.Klocker: Journal of Applied Physics, 2007, 101[8], 083529