The H diffusion coefficient in Si at 429 to 800C was obtained by using enhanced formation of thermal double donors, which was caused by in-grown H. An as-grown Czochralski Si ingot contained H as a low-concentration impurity. Although present in a very small quantity, it was possible to observe enhanced threading dislocation density formation, due to in-grown H, as a variation of the resistance of the specimen using a high-resistance ingot (>500Ωcm). The H diffusion coefficient, obtained by using the depth profile of thermal double donors which were generated under the influence of the depth profile of the in-grown H, exhibited a value which was close to that given by Van Wieringen and Warmoltz. Furthermore, it was found that the activation energy of H diffusion in the intermediate temperature region was almost the same as that obtained by Van Wieringen and Warmoltz. This indicated that the H diffusion coefficient could be expressed by the equation given by Van Wieringen and Warmoltz for the intermediate temperature region.

Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature. A.Hara: Japanese Journal of Applied Physics, 2007, 46[3A], 962-4