The microstructures of multiple quantum-well contacts were investigated by using high-resolution transmission electron microscopy. In the case of samples which consisted of 5 multiple quantum-wells, both pure edge Lomer dislocations and 60º dislocations were identified at the interface between the ZnSe/ZnTe multiple quantum wells and a ZnTe overlayer; together with partial dislocations that bounded stacking faults. The predominant dislocations at the interface were Lomer dislocations. In the case of samples which were grown under group-II rich conditions, the interface exhibited corrugations. Lomer dislocations predominated at the top and bottom of these corrugations. The 60º dislocations predominated on the slopes of the corrugations. In the case of samples which were grown using migration-enhanced epitaxy, V-shaped defects formed which consisted of 3 dislocations associated with 2 stacking faults. The total Burgers vector of the V-shaped defects was a<100>. An increasing total thickness, and increasing number of ZnSe/ZnTe multiple quantum wells, favoured dissociated 60º dislocations being the predominant defects.

Defects in ZnSe/ZnTe Multiple Quantum Well-Based Pseudo-Ohmic Contacts to p-ZnSe S.Tomiya, S.Kijima, H.Okuyama, H.Tsukamoto, T.Hino, S.Taniguchi, H.Noguchi, E.Kato, A.Ishibashi: Journal of Applied Physics, 1999, 86[7], 3616-23