In order to identify what types of kinetics and reactions were relevant to nano-processing, diffusion in Si and the oxide was studied by using isotopically controlled Si heterostructures. Experiments which probed the effect of interfaces upon impurity and Si self-diffusion in silicon dioxide, Si self-diffusion in Si, and implanted-impurity and Si interactions were reviewed. Then quantitative models based upon experimental studies were presented together with their utilization in the construction of diffusion simulators.

Defect Studies for the Development of Nano-Scale Silicon Diffusion Simulators. M.Uematsu, Y.Shimizu, K.M.Itoh: Physica B, 2007, 401-402, 511-8