It was noted that quantitative information on the electrical deactivation of doping could be obtained by combining the results of positron annihilation, secondary ion mass spectrometry and capacitance-voltage measurements. After using this method to study the N-doping of ZnS0.94S0.06, it was concluded that the fraction of electrically inactive N could range from 0 to 80%; depending upon the growth conditions. Some 40% of the electrically active N existed in the isolated acceptor configuration, NSe-, and another 40% was bound to compensating donors; probably (ZniNSe)+ and (VSeNSe)+ pairs. Some 20% usually formed negative (VSeNSe)- complexes with the Se vacancy.

Experimental Identification of the Doping Deactivation Mechanism in Semiconductors - Application to Nitrogen in ZnSSe J.Oila, K.Saarinen, T.Laine, P.Hautojärvi, P.Uusimaa, M.Pessa, J.Likonen: Physical Review B, 1999, 59[20], R12736-9