Special features of the annealing of radiation defects in irradiated p-Si Czochralski single crystals were studied. The hole concentration in these crystals was p = 6 x 1013/cm3. The samples were irradiated with 8MeV electrons at 300K, and were then isochronously annealed at 100 to 500C. The studies were carried out by using the Hall method at 77 to 300K. It was shown that the annealing out of divacancies occurred via their transformation into BsV2 complexes. This complex introduced an energy level, located at Ev+0.22eV, into the band-gap and was annealed out at 360 to 440C. It was assumed that defects with the level Ev+0.2eV, that annealed out at 340 to 450C, were multi-component complexes and contained atoms of the doping and background impurities.

Special Features of Annealing of Radiation Defects in Irradiated p-Si Crystals. T.A.Pagava: Semiconductors, 2007, 41[6], 631-3