Defect formation and annealing processes in n-type Si crystals heat-treated at 550 to 1000C for a short time and then γ-irradiated in a 60Co source or electron-irradiated (E = 4MeV) at room temperature were studied by using Hall effect measurements. The results demonstrated that the pre-heat treatment had an insignificant effect upon the energy spectrum and generation efficiency of major defect species. At the same time, pre heat-treatment resulted in an enhanced annealing of radiation-induced defects, accompanied by the formation of additional electrically active centres. Pre heat-treatment was assumed to activate transition-metal impurities (fast diffusers in Si), which then interacted with radiation-induced defects.

Effect of High-Temperature Heat Treatment on the Generation and Annealing of Radiation-Induced Defects in n-Type Silicon Crystals. F.P.Korshunov, I.F.Medvedeva, L.I.Murin, V.P.Markevich: Inorganic Materials, 2007, 43[11], 1153-9